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| polyfet rf devices SK703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.65 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 16.0 A RF CHARACTERISTICS ( 120.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 1.20 A, Vds = 28.0 V, F = Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz 400 MHz VSWR Relative Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 3.6 0.35 21.00 150.0 9.0 96.0 MIN 65 3.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 60.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SK703 POUT VS PIN GRAPH SK703 F=400MHZ, VDS=28V, Idq=.6A 140 130 120 110 100 90 80 70 60 50 40 2 4 6 PIN IN WATTS 8 10 12 10 1 0 5 10 15 20 25 30 13 1000 CAPACITANCE VS VOLTAGE S1A 3 DICE CAPACITANCE Pout Ciss 12 100 Coss Gain 11 10 Efficiency = 55% Crss VDS IN VOLTS IV CURVE S1A 3 DIE IV 25 ID & GM VS VGS 100.00 S1A 3 DIE ID & GM Vs VG 20 Id in amps; Gm in mhos 10.00 Id ID IN AMPS 15 10 gM 1.00 5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTS vg=8v 14 0 16 18 vg=12v 20 0.10 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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